Number of the records: 1

Photoemission from alfa and beta phases of the GaAs(001)-c(4x4) surface

SYSNO ASEP	0340742
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Článek ve WOS
Title	Photoemission from alfa and beta phases of the GaAs(001)-c(4x4) surface
Author(s)	Jiříček, Petr (FZU-D)_{RID, ORCID, SAI} Cukr, Miroslav (FZU-D) Bartoš, Igor (FZU-D)_{RID, ORCID} Sadowski, J. (PL)
Source Title	Surface Science. - : Elsevier - ISSN 0039-6028 Roč. 603, č. 20 (2009), s. 3088-3093
Number of pages	7 s.
Language	eng - English
Country	NL - Netherlands
Keywords	gallium arsenide ; angle resolved photoemission ; synchrotron radiation photoelectron spectroscopy ; molecular beam epitaxy ; surface core level shift
Subject RIV	BM - Solid Matter Physics ; Magnetism
R&D Projects	GA202/07/0601 GA ČR - Czech Science Foundation (CSF)
	IAA100100628 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
CEZ	AV0Z10100521 - FZU-D (2005-2011)
UT WOS	000271179600009
DOI	10.1016/j.susc.2009.08.021
Annotation	The α and β phases of the GaAs(001)-c(4x4) surface were prepared by molecular beam epitaxy. The properties of these phases were studied by UPS and XPS using synchrotron radiation as an excitation source.
Workplace	Institute of Physics
Contact	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Year of Publishing	2010

Number of the records: 1