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Decomposition of mixed phase silicon Raman spectra
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SYSNO ASEP 0339516 Document Type C - Proceedings Paper (int. conf.) R&D Document Type Conference Paper Title Decomposition of mixed phase silicon Raman spectra Author(s) Ledinský, Martin (FZU-D) RID, ORCID, SAI
Stuchlík, Jiří (FZU-D) RID, ORCID
Vetushka, Aliaksi (FZU-D) RID, ORCID
Fejfar, Antonín (FZU-D) RID, ORCID, SAI
Kočka, Jan (FZU-D) RID, ORCID, SAISource Title Amorphous and Polycrystalline Thin-Film Silicon Science and Technology — 2009. - Warrendale, PA : Materials Research Society, 2009 / Flewitt A. ; Wang Q. ; Hou J. ; Uchikoga S. ; Nathan A. - ISBN 978-1-60511-126-1 Pages s. 15-20 Number of pages 6 s. Action MRS spring meating 2009 Event date 13.04.2009-17.04.2009 VEvent location San Francisco, CA Country US - United States Event type WRD Language eng - English Country US - United States Keywords Raman spectroscopy ; silicon thin films ; photovoltaics Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects LC06040 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) KAN400100701 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) LC510 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) CEZ AV0Z10100521 - FZU-D (2005-2011) Annotation Series of Raman spectra were measured for microcrystalline silicon thin film with variable crystallinity. Five sets of Raman spectra (corresponding to excitations at 325 nm, 442 nm, 514.5 nm, 632.8 nm and 785 nm wavelengths) were subjected to factor analysis which showed that each set of spectra consisted of just two independent spectral components. Decomposition of the measured Raman spectra into the amorphous and the microcrystalline components is illustrated for 514.5 nm and 632.8 nm excitations. Effect of the light scattering on absolute intensity of Raman spectra was identified even for excitation wavelength highly absorbed in the mixed phase silicon layers. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2010
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