Number of the records: 1  

Decomposition of mixed phase silicon Raman spectra

  1. 1.
    SYSNO ASEP0339516
    Document TypeC - Proceedings Paper (int. conf.)
    R&D Document TypeConference Paper
    TitleDecomposition of mixed phase silicon Raman spectra
    Author(s) Ledinský, Martin (FZU-D) RID, ORCID, SAI
    Stuchlík, Jiří (FZU-D) RID, ORCID
    Vetushka, Aliaksi (FZU-D) RID, ORCID
    Fejfar, Antonín (FZU-D) RID, ORCID, SAI
    Kočka, Jan (FZU-D) RID, ORCID, SAI
    Source TitleAmorphous and Polycrystalline Thin-Film Silicon Science and Technology — 2009. - Warrendale, PA : Materials Research Society, 2009 / Flewitt A. ; Wang Q. ; Hou J. ; Uchikoga S. ; Nathan A. - ISBN 978-1-60511-126-1
    Pagess. 15-20
    Number of pages6 s.
    ActionMRS spring meating 2009
    Event date13.04.2009-17.04.2009
    VEvent locationSan Francisco, CA
    CountryUS - United States
    Event typeWRD
    Languageeng - English
    CountryUS - United States
    KeywordsRaman spectroscopy ; silicon thin films ; photovoltaics
    Subject RIVBM - Solid Matter Physics ; Magnetism
    R&D ProjectsLC06040 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    KAN400100701 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
    LC510 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    CEZAV0Z10100521 - FZU-D (2005-2011)
    AnnotationSeries of Raman spectra were measured for microcrystalline silicon thin film with variable crystallinity. Five sets of Raman spectra (corresponding to excitations at 325 nm, 442 nm, 514.5 nm, 632.8 nm and 785 nm wavelengths) were subjected to factor analysis which showed that each set of spectra consisted of just two independent spectral components. Decomposition of the measured Raman spectra into the amorphous and the microcrystalline components is illustrated for 514.5 nm and 632.8 nm excitations. Effect of the light scattering on absolute intensity of Raman spectra was identified even for excitation wavelength highly absorbed in the mixed phase silicon layers.
    WorkplaceInstitute of Physics
    ContactKristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
    Year of Publishing2010
Number of the records: 1  

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