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Pre-edge XANES structure of Mn in (Ga,Mn)As from first principles

SYSNO ASEP	0337620
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Ostatní články
Title	Pre-edge XANES structure of Mn in (Ga,Mn)As from first principles
Title	Pre-edge XANES struktura Mn v (Ga,Mn)As vypočtená z prvních principů
Author(s)	Goncharuk, Natalya (FZU-D) Kučera, Jan (FZU-D)_RID Smrčka, Ludvík (FZU-D)_{RID, ORCID}
Number of authors	3
Source Title	Chemistry of Metals and Alloys - ISSN 1998-8079 Roč. 2, 1-2 (2009), s. 34-38
Number of pages	5 s.
Language	eng - English
Country	UA - Ukraine
Keywords	(Ga,Mn)As magnetic semiconductor ; X-ray absorption near-edge structure ; substitutional ; interstitial / ; defects
Subject RIV	BM - Solid Matter Physics ; Magnetism
R&D Projects	LC510 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
	KAN400100652 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
CEZ	AV0Z10100521 - FZU-D (2005-2011)
Annotation	The X-ray absorption near-edge structure (XANES) at the Mn K-edge in the (Ga,Mn)As magnetic semiconductor was simulated using the full potential linearized augmented plane wave (FLAPW) method including the core-hole effect. The calculations were performed in the supercell scheme for a substitutional and two tetrahedral interstitial Mn sites.
Workplace	Institute of Physics
Contact	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Year of Publishing	2010

Number of the records: 1