Number of the records: 1

Etching enhanced annealing of GaMnAs layers

SYSNO ASEP	0337274
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Článek ve WOS
Title	Etching enhanced annealing of GaMnAs layers
Title	Zvýšení účinnosti žíhaní GaMnAs pomocí leptání
Author(s)	Olejník, Kamil (FZU-D)_{RID, ORCID} Novák, Vít (FZU-D)_{RID, ORCID} Cukr, Miroslav (FZU-D) Mašek, Jan (FZU-D)_RID Jungwirth, Tomáš (FZU-D)_{RID, ORCID}
Number of authors	5
Source Title	Journal of Crystal Growth. - : Elsevier - ISSN 0022-0248 Roč. 311, č. 7 (2009), s. 2151-2154
Number of pages	4 s.
Language	eng - English
Country	NL - Netherlands
Keywords	surface processes ; molecular beam epitaxy ; magnetic materials
Subject RIV	BM - Solid Matter Physics ; Magnetism
R&D Projects	LC510 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
	KAN400100652 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
	GEFON/06/E001 GA ČR - Czech Science Foundation (CSF)
CEZ	AV0Z10100521 - FZU-D (2005-2011)
UT WOS	000265659300127
DOI	10.1016/j.jcrysgro.2008.10.051
Annotation	We have studied the annealing process of GaMnAs enhanced by etching off the surfaře oxide layer.
Workplace	Institute of Physics
Contact	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Year of Publishing	2010

Number of the records: 1