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Toward a low-voltage multiferroic transistor: magnetic (Ga,Mn)As under ferroelectric control

SYSNO ASEP	0337207
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Článek ve WOS
Title	Toward a low-voltage multiferroic transistor: magnetic (Ga,Mn)As under ferroelectric control
Title	Multiferoický transistor ovládaný slabým elektrickým polem: Magnetický (Ga,Mn)As ovládaný feroelektrickou vrstvou
Author(s)	Riester, S.W.E. (CH) Stolichnov, I. (CH) Trodahl, H.J. (CH) Setter, N. (CH) Rushforth, A.W. (GB) Edmonds, K. W. (GB) Campion, R. P. (GB) Foxon, C. T. (GB) Gallagher, B. L. (GB) Jungwirth, Tomáš (FZU-D)_{RID, ORCID}
Number of authors	10
Source Title	Applied Physics Letters. - : AIP Publishing - ISSN 0003-6951 Roč. 94, č. 6 (2009), 063504/1-063504/3
Number of pages	3 s.
Language	eng - English
Country	US - United States
Keywords	Curie temperature ; dielectric polarisation ; erroelectric devices ; ferroelectric materials ; insulated gate field effect tran
Subject RIV	BM - Solid Matter Physics ; Magnetism
R&D Projects	LC510 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
	KAN400100652 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
	GEFON/06/E002 GA ČR - Czech Science Foundation (CSF)
CEZ	AV0Z10100521 - FZU-D (2005-2011)
UT WOS	000263409400109
DOI	10.1063/1.3076107
Annotation	We have fabricated and studied experimentallz and theoretically a new type of a spintronic transistor with GaMnAs channel and ferroelectric gate electrode.
Workplace	Institute of Physics
Contact	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Year of Publishing	2010

Number of the records: 1