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Free carrier induced substrate heating of the epitaxially grown GaMnAs
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SYSNO ASEP 0336403 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Free carrier induced substrate heating of the epitaxially grown GaMnAs Title Zahřívání substrátu vlivem absorpce na volných nosičích přiepitaxním růstu GaMnAs Author(s) Novák, Vít (FZU-D) RID, ORCID
Olejník, Kamil (FZU-D) RID, ORCID
Cukr, Miroslav (FZU-D)Number of authors 3 Source Title Journal of Crystal Growth. - : Elsevier - ISSN 0022-0248
Roč. 311, č. 7 (2009), s. 2132-2134Number of pages 3 s. Language eng - English Country NL - Netherlands Keywords GaMnAs ; MBE ; diluted magnetic semiconductors Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects LC510 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) KAN400100652 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) GEFON/06/E001 GA ČR - Czech Science Foundation (CSF) CEZ AV0Z10100521 - FZU-D (2005-2011) UT WOS 000265659300122 DOI doi:10.1016/j.jcrysgro.2008.09.034 Annotation Dramatic increase of the substrate temperature during the epitaxial growth of GaMnAs has been observed and explained in terms of radiative heating via free carrier absorption. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2010
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