Scanning low energy electron microscopy of doped silicon at units of eV

Number of the records: 1

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SYSNO ASEP	0335882
Document Type	A - Abstract
R&D Document Type	The record was not marked in the RIV
R&D Document Type	Není vybrán druh dokumentu
Title	Scanning low energy electron microscopy of doped silicon at units of eV
Author(s)	Hovorka, Miloš (UPT-D) Mikmeková, Šárka (UPT-D)_{RID, SAI, ORCID} Frank, Luděk (UPT-D)_{RID, SAI, ORCID}
Number of authors	3
Source Title	6th International Workshop on LEEM/PEEM. - Trieste : ELETTRA, 2008 - ISBN N S. 110
Number of pages	1 s.
Action	International Workshop on LEEM/PEEM /6./
Event date	07.09.2008-11.09.2008
VEvent location	Trieste
Country	IT - Italy
Event type	WRD
Language	eng - English
Country	IT - Italy
Keywords	very low energy electron microscopy ; scanning low energy electron microscope
Subject RIV	JA - Electronics ; Optoelectronics, Electrical Engineering
R&D Projects	IAA100650803 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
CEZ	AV0Z20650511 - UPT-D (2005-2011)
Annotation	Very low energy electron microscopy with the primary beam of hundreds of eV has proven very useful when imaging doped areas in semiconductors at high lateral resolution and high sensitivity to the dopant concentration. We employed the scanning low energy electron microscope equipped with the cathode lens in imaging of doped silicon samples at the landing energy of few eV.
Workplace	Institute of Scientific Instruments
Contact	Martina Šillerová, sillerova@ISIBrno.Cz, Tel.: 541 514 178
Year of Publishing	2011

Number of the records: 1