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Intra-atomic charge re-organization at the Pb Si interface: bonding mechanism at low cover
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SYSNO ASEP 0335755 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Intra-atomic charge re-organization at the Pb Si interface: bonding mechanism at low cover Title Intra-atomární reorganizace náboje na Pb-Si rozhraní: vazebný mechanismus při nízkém pokrytí Author(s) Švec, Martin (FZU-D) RID, ORCID
Dudr, Viktor (FZU-D)
Vondráček, Martin (FZU-D) RID, ORCID
Jelínek, Pavel (FZU-D) RID, ORCID
Mutombo, Pingo (FZU-D) RID, ORCID
Cháb, Vladimír (FZU-D) RID, ORCID
Šutara, F. (CZ)
Matolín, V. (CZ)
Prince, K. C. (IT)Source Title Surface Science. - : Elsevier - ISSN 0039-6028
Roč. 603, č. 18 (2009), s. 2861-2869Number of pages 9 s. Language eng - English Country NL - Netherlands Keywords density functional calculations ; green´s functional methods ; synchrotron radiation photoelectron spectroscopy x-ray scattering ; lead ; silicon Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects IAA1010413 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) IAA100100616 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) CEZ AV0Z10100521 - FZU-D (2005-2011) UT WOS 000270640700006 DOI 10.1016/j.susc.2009.07.033 Annotation We performed both experimental and theoretical study of dynamical fluctuation of Pb adatoms between up and down positions which is connected with the charge redistribution in the basic triangular bipyramid formed by an adsorbed Pb atom and its four closest Si neighbors. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2010
Number of the records: 1