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Conjugated Silicon – Based Polymer Resists for Nanotechnologies: EB and UV Mediated Degradation Processes in Polysilanes
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SYSNO ASEP 0335299 Document Type C - Proceedings Paper (int. conf.) R&D Document Type Conference Paper Title Conjugated Silicon – Based Polymer Resists for Nanotechnologies: EB and UV Mediated Degradation Processes in Polysilanes Author(s) Schauer, F. (CZ)
Schauer, Petr (UPT-D) RID, SAI, ORCID
Kuřitka, I. (CZ)
Hua, B. (CN)Number of authors 4 Source Title Proceedings of the 4th Czech-Japan-China Cooperative Symposium on Nanostructure of Advanced Materials and Nanotechnology (CJCS’09). - Brno : ISI AS CR, 2009 / Pokorná Zuzana ; Mika Filip - ISBN 978-80-254-4535-8 Pages s. 28 Number of pages 1 s. Action CJCS’09 - Czech-Japan-China Cooperative Symposium on Nanostructure of Advanced Materials and Nanotechnology /4./ Event date 10.08.2009-14.08.2009 VEvent location Brno Country CZ - Czech Republic Event type WRD Language eng - English Country CZ - Czech Republic Keywords photoluminescence ; cathodoluminescence ; silicon-based polymer resist Subject RIV JA - Electronics ; Optoelectronics, Electrical Engineering CEZ AV0Z20650511 - UPT-D (2005-2011) Annotation The main purpose of this paper is to compare the photoluminescence (PL) and cathodoluminescence (CL) after major degradation, predominantly in long wavelength range 400 - 600 nm, studying the disorder due to dangling bonds, conformational transformations and weak bonds created by the degradation process. Workplace Institute of Scientific Instruments Contact Martina Šillerová, sillerova@ISIBrno.Cz, Tel.: 541 514 178 Year of Publishing 2011
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