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Profiling of N-Type Dopants in Silicon Based Structures
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SYSNO ASEP 0335293 Document Type C - Proceedings Paper (int. conf.) R&D Document Type Conference Paper Title Profiling of N-Type Dopants in Silicon Based Structures Author(s) Hovorka, Miloš (UPT-D)
Mika, Filip (UPT-D) RID, SAI, ORCID
Frank, Luděk (UPT-D) RID, SAI, ORCID
Mikulík, P. (CZ)Number of authors 4 Source Title Proceedings of the 4th Czech-Japan-China Cooperative Symposium on Nanostructure of Advanced Materials and Nanotechnology (CJCS’09). - Brno : ISI AS CR, 2009 / Pokorná Zuzana ; Mika Filip - ISBN 978-80-254-4535-8 Pages s. 14 Number of pages 1 s. Action CJCS’09 - Czech-Japan-China Cooperative Symposium on Nanostructure of Advanced Materials and Nanotechnology /4./ Event date 10.08.2009-14.08.2009 VEvent location Brno Country CZ - Czech Republic Event type WRD Language eng - English Country CZ - Czech Republic Keywords n-type substrate ; SEM ; PEEM ; doping levels Subject RIV JA - Electronics ; Optoelectronics, Electrical Engineering R&D Projects GP102/09/P543 GA ČR - Czech Science Foundation (CSF) IAA100650803 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) CEZ AV0Z20650511 - UPT-D (2005-2011) Annotation We have focused on variously doped n-type pattems on a lightly doped p-type substrate because of lack of data for these structures. We have designed and prepared planar structures of this kind at the university clean room. Combination of the UHV SEM and PEEM microscooes should facilitate possible quantifying of the the doping levels in the n-type areas and explanation of their contrast with respect to the p-type substrate. In addition to the SEM observations at very low energies (down to the units of eV), we performed the laterally resolved threshold and soft X-ray spectroscopies in a PEEM equipped with an energy filter. Workplace Institute of Scientific Instruments Contact Martina Šillerová, sillerova@ISIBrno.Cz, Tel.: 541 514 178 Year of Publishing 2011
Number of the records: 1