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Influence of process parameters on the properties of TEOS DF-PECVD grown SiO2 films by DOE
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SYSNO ASEP 0335271 Document Type C - Proceedings Paper (int. conf.) R&D Document Type Conference Paper Title Influence of process parameters on the properties of TEOS DF-PECVD grown SiO2 films by DOE Author(s) Mikmeková, Eliška (UPT-D) RID
Janča, J. (CZ)
Dvořáková, M. (CZ)Number of authors 3 Source Title MC 2009 - Microscopy Conference: First Joint Meeting of Dreiländertagung and Multinational Conference on Microscopy. - Graz : Verlag der Technischen Universität, 2009 - ISBN 978-3-85125-062-6 Pages vol. 3: 463-464 Number of pages 2 s. Action MC 2009 - Joint Meeting of Dreiländertagung and Multinational Congress on Microscopy /9./ Event date 30.08.2009-04.09.2009 VEvent location Graz Country AT - Austria Event type WRD Language eng - English Country AT - Austria Keywords DF-PECVD ; silicon dioxide ; intrinsic stress ; DOE ; SEM Subject RIV JA - Electronics ; Optoelectronics, Electrical Engineering CEZ AV0Z20650511 - UPT-D (2005-2011) Annotation The aim of this work is to optimize deposition process for thin silicon dioxide films preparation and to study the influence of stress in these films. Workplace Institute of Scientific Instruments Contact Martina Šillerová, sillerova@ISIBrno.Cz, Tel.: 541 514 178 Year of Publishing 2010
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