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Profiling of N-type dopants in silicon structures

SYSNO ASEP	0335261
Document Type	C - Proceedings Paper (int. conf.)
R&D Document Type	Conference Paper
Title	Profiling of N-type dopants in silicon structures
Author(s)	Hovorka, Miloš (UPT-D) Mika, Filip (UPT-D)_{RID, SAI, ORCID} Frank, Luděk (UPT-D)_{RID, SAI, ORCID}
Number of authors	3
Source Title	MC 2009 - Microscopy Conference: First Joint Meeting of Dreiländertagung and Multinational Conference on Microscopy. - Graz : Verlag der Technischen Universität, 2009 - ISBN 978-3-85125-062-6
Pages	vol. 1: 181-182
Number of pages	2 s.
Action	MC 2009 - Joint Meeting of Dreiländertagung and Multinational Congress on Microscopy /9./
Event date	30.08.2009-04.09.2009
VEvent location	Graz
Country	AT - Austria
Event type	WRD
Language	eng - English
Country	AT - Austria
Keywords	silicon ; dopants ; PEEM ; SEM
Subject RIV	JA - Electronics ; Optoelectronics, Electrical Engineering
R&D Projects	GP102/09/P543 GA ČR - Czech Science Foundation (CSF)
	IAA100650803 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
CEZ	AV0Z20650511 - UPT-D (2005-2011)
Annotation	Among the dopant profiling techniques the scanning electron microscopy (SEM) reached position of a well established method which offers a high spatial resolution and good sensitivity to dopant concentration. Differently doped areas exhibit a contrast depending on the dopant level and surface conditions. Photoemission electron microscopy (PEEM) is a surface-sensitive alternative providing a high sensitivity to the dopant density. Both methods have already been successfully applied in imaging and characterization of the doped silicon structures.
Workplace	Institute of Scientific Instruments
Contact	Martina Šillerová, sillerova@ISIBrno.Cz, Tel.: 541 514 178
Year of Publishing	2010

Number of the records: 1