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Problems with synthesis of chalcopyrite CuIn.sub.1-x./sub. B.sub.x./sub.Se.sub.2./sub..
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SYSNO ASEP 0334334 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Problems with synthesis of chalcopyrite CuIn1-x BxSe2. Title Problémy při syntéze chalkopyritu CuIn1-x BxSe2. Author(s) Olejníček, Jiří (FZU-D) RID, ORCID
Darveau, S.A. (US)
Exstrom, C.L. (US)
Soukup, R. J. (US)
Ianno, N.J. (US)
Kamler, C.A. (US)
Huguenin-Love, J.L. (US)Number of authors 7 Source Title Materials Science Forum - ISSN 0255-5476
Roč. 609, - (2009), s. 33-36Number of pages 4 s. Language eng - English Country CH - Switzerland Keywords CuIn1-x BxSe2 ; CIBS ; selenization ; solar cells Subject RIV BM - Solid Matter Physics ; Magnetism CEZ AV0Z10100522 - FZU-D (2005-2011) UT WOS 000264750100004 DOI 10.4028/www.scientific.net/MSF.609.33 Annotation Thin films of CuIn1-xBxSe2 (CIBS) as absorption layer in single-junction solar cells can potentially grant a higher band gap in comparison with other studied chalcopyrite materials like CuIn1-xGaxSe2 (CIGS) and CuIn1-xAlxSe2 (CIAS). The higher band gap near optimum value ~ 1.4 eV can help to achieve higher efficiency (today 19.5% for CuIn0.74Ga0.26Se2.). In this paper are described first results of experiments with effort to produce CIBS films by selenization of CuInB precursor alloy in Se vapors. Resulting material was analyzed by Raman spectroscopy, X-ray diffraction, and Auger electron spectroscopy. Measurements show that formation of CIBS layer is complicated by forming of pure CuInSe2 layer with unwanted Cu2-xSe phases and by accumulation boron near to the substrate. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2010
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