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Radiation damage to amorphous carbon thin films irradiated by multiple 46.9 nm laser shots below the single-shot damage threshold

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    SYSNO ASEP0334101
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitleRadiation damage to amorphous carbon thin films irradiated by multiple 46.9 nm laser shots below the single-shot damage threshold
    TitleRadiační poškození tenkých vrstev amorfního uhlíku ozářených několika 46.9-nm laserovými pulzy pod prahem poškození jedním impulzem
    Author(s) Juha, Libor (FZU-D) RID, ORCID, SAI
    Hájková, Věra (FZU-D) RID, ORCID
    Chalupský, Jaromír (FZU-D) RID, ORCID
    Vorlíček, Vladimír (FZU-D) RID
    Ritucci, A. (IT)
    Reale, A. (IT)
    Zuppella, P. (IT)
    Störmer, M. (DE)
    Source TitleJournal of Applied Physics. - : AIP Publishing - ISSN 0021-8979
    Roč. 105, č. 9 (2009), 093117/1-093117/3
    Number of pages6 s.
    Languageeng - English
    CountryUS - United States
    Keywordssingle-shot damage threshold ; multiple-shot exposure damage ; amorphous carbon ; radiation erosion ; capillary-discharge XUV laser
    Subject RIVBH - Optics, Masers, Lasers
    R&D ProjectsKAN300100702 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
    LC510 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    LC528 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    LA08024 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    IAA400100701 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
    CEZAV0Z10100523 - FZU-D (2005-2011)
    UT WOS000266263300018
    DOI10.1063/1.3117515
    AnnotationHigh-surface-quality amorphous carbon (a-C) optical coatings with a thickness of 45 nm, deposited by magnetron sputtering on a silicon substrate, were irradiated by the 46.9 nm focused beam of capillary-discharge Ne-like Ar extreme ultraviolet laser. It has been found that an accumulation of 10, 20, and 40 shots at a fluence of 0.5 J/cm(2), i.e., below the single-shot damage threshold, causes irreversible changes of thin a-C layers, which can be registered by both the AFM and the DIC microscopy. In the center of the damaged area, AFM shows a-C removal to a maximum depth of 0.3, 1.2, and 1.5 nm for 10-, 20-and 40-shot exposure, respectively.
    WorkplaceInstitute of Physics
    ContactKristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
    Year of Publishing2010
Number of the records: 1  

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