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Wavelength dependence of the damage threshold of inorganic materials under extreme-ultraviolet free-electron-laser irradiation
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SYSNO ASEP 0334092 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Wavelength dependence of the damage threshold of inorganic materials under extreme-ultraviolet free-electron-laser irradiation Title Závislost prahu poškození anorganických materiálů ozářených XUV laserem s volnými elektrony Author(s) Hau-Riege, S.P. (US)
London, R.A. (US)
Bionta, R.M. (US)
Ryutov, D. (US)
Soufli, R. (US)
Bajt, S. (US)
McKernan, M.A. (US)
Baker, S. L. (US)
Krzywinski, J. (US)
Sobierajski, R. (PL)
Nietubyc, R. (PL)
Klinger, D. (PL)
Pelka, J. B. (PL)
Jurek, M. (PL)
Juha, Libor (FZU-D) RID, ORCID, SAI
Chalupský, Jaromír (FZU-D) RID, ORCID
Cihelka, Jaroslav (FZU-D)
Hájková, Věra (FZU-D) RID, ORCID
Velyhan, Andriy (FZU-D) RID, ORCID
Krása, Josef (FZU-D) RID, ORCID
Tiedtke, K. (DE)
Toleikis, S. (DE)
Wabnitz, H. (DE)
Bergh, M. (SE)
Caleman, C. (SE)
Timneanu, N. (SE)Source Title Applied Physics Letters. - : AIP Publishing - ISSN 0003-6951
Roč. 95, č. 11 (2009), 111104/1-111104/3Number of pages 3 s. Language eng - English Country US - United States Keywords damage threshold ; silicon carbide ; boron carbide ; soft X-ray free-electron laser Subject RIV BH - Optics, Masers, Lasers R&D Projects KAN300100702 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) LC510 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) LC528 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) LA08024 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) IAA400100701 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) CEZ AV0Z10100523 - FZU-D (2005-2011) UT WOS 000270096900004 DOI 10.1063/1.3216845 Annotation We exposed bulk SiC and films of SiC and B4C to single 25 fs long free-electron-laser pulses with wavelengths between 13.5 and 32 nm. The materials are candidates for x-ray free-electron laser optics. We found that the threshold for surface-damage of the bulk SiC samples exceeds the fluence required for thermal melting at all wavelengths. The damage threshold of the film sample shows a strong wavelength dependence. For wavelengths of 13.5 and 21.7 nm, the damage threshold is equal to or exceeds the melting threshold, whereas at 32 nm the damage threshold falls below the melting threshold. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2010
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