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A study of the ion flux during deposition of titanium thin films by hollow cathode plasma jet

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    SYSNO ASEP0333649
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JOstatní články
    TitleA study of the ion flux during deposition of titanium thin films by hollow cathode plasma jet
    TitleStudium iontového toku během depozice tenkých vrstev titanu pomocí plazmové trysky s efektem duté katody
    Author(s) Virostko, Petr (FZU-D)
    Hubička, Zdeněk (FZU-D) RID, ORCID, SAI
    Čada, Martin (FZU-D) RID, ORCID, SAI
    Kment, Štěpán (FZU-D) RID, ORCID
    Jastrabík, Lubomír (FZU-D) RID, ORCID
    Tichý, M. (CZ)
    Source TitleJournal of Plasma and Fusion Research SERIES - ISSN 1883-9630
    Roč. 8, - (2009), 719-723
    Number of pages5 s.
    ActionProceedings of the 14th International Congress on Plasma Physics (ICPP2008)
    Event date08.09.2008-12.09.2008
    VEvent locationFukuoka
    CountryJP - Japan
    Event typeWRD
    Languageeng - English
    CountryJP - Japan
    Keywordsion flux ; plasma jet ; hollow cathode ; plasma diagnostics
    Subject RIVBL - Plasma and Gas Discharge Physics
    R&D ProjectsKJB100100707 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
    KJB100100805 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
    1M06002 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    CEZAV0Z10100522 - FZU-D (2005-2011)
    AnnotationFlux of positive ions to the substrate in the hollow cathode plasma jet system during deposition of titanium thin films was studied. The substrate was negatively biased by applying 50 kHz pulsed DC, or 0.50-1.25 MHz and 13.56 MHz high-frequency voltage to it. The ion flux determined in the DC hollow cathode discharge during the active high frequency bias was systematically higher than for the pulsed DC bias or determined right after the high frequency bias was turned off. On the other hand in the RF hollow cathode discharge, the ion fluxes determined for the active high frequency and 50 kHz low frequency bias were comparable. Possible explanations of this phenomenon are discussed.
    WorkplaceInstitute of Physics
    ContactKristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
    Year of Publishing2010
Number of the records: 1  

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