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Heterogeneous nucleation and adatom detachment at one-dimensional growth of In on Si(100)-2 x 1

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    SYSNO ASEP0331417
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitleHeterogeneous nucleation and adatom detachment at one-dimensional growth of In on Si(100)-2 x 1
    TitleHeterogenní nukleace a odtrhávaní adatomů při jedno-dimensionalním růstu In na povrchu Si(100)-2 x 1
    Author(s) Javorský, J. (CZ)
    Setvín, M. (CZ)
    Ošt'ádal, I. (CZ)
    Sobotík, P. (CZ)
    Kotrla, Miroslav (FZU-D) RID, ORCID
    Number of authors5
    Source TitlePhysical Review. B - ISSN 1098-0121
    Roč. 79, č. 16 (2009), 165424/1-165424/9
    Number of pages9 s.
    Languageeng - English
    CountryUS - United States
    Keywordsatomic chains ; surface growth ; nanostructures ; indium ; silicon ; adatom diffusion ; STM ; kinetic MC ; simulation
    Subject RIVBM - Solid Matter Physics ; Magnetism
    R&D ProjectsGA202/06/0049 GA ČR - Czech Science Foundation (CSF)
    CEZAV0Z10100520 - FZU-D (2005-2011)
    UT WOS000265945200102
    DOI10.1103/PhysRevB.79.165424
    AnnotationGrowth of atomic indium chains - 1D islands - on the Si(100)-2x1 surface was observed by scanning tunneling microscopy at room temperature and simulated by means of a kinetic Monte Carlo method. Density of indium islands and island size distribution were obtained for various deposition rates and coverage. Important role of C-type defects at adsorption of metal atoms was observed. Measured growth characteristics were simulated using a microscopic model with anisotropic surface diffusion and forbidden zones along the metal chains. An analysis of experimental and simulation data shows that detachment of indium adatoms from the chains substantially influences a growth scenario and results in monotonously decreasing chain length distribution function at low coverage. Diffusion barriers determined from the simulations correspond to almost isotropic diffusion of indium adatoms on the surface.
    WorkplaceInstitute of Physics
    ContactKristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
    Year of Publishing2010
Number of the records: 1  

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