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A new kind of quasi-ohmic metallization in semi-insulating GaAs: study of electrical characteristics
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SYSNO ASEP 0331194 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title A new kind of quasi-ohmic metallization in semi-insulating GaAs: study of electrical characteristics Title Nový typ kvaziohmické metalizace v semiizolačním GaAs Author(s) Dubecký, F. (SK)
Zat'ko, B. (SK)
Hubík, Pavel (FZU-D) RID, ORCID
Gombia, E. (IT)
Boháček, P. (SK)
Huran, J. (SK)
Sekáčová, M. (SK)Source Title Nuclear Instruments & Methods in Physics Research Section A. - : Elsevier - ISSN 0168-9002
Roč. 607, č. 1 (2009), 132-134Number of pages 3 s. Action International Workshop on Radiation Imaging Detectors /10./ Event date 29.06.2008-03.07.2008 VEvent location Helsinki Country FI - Finland Event type WRD Language eng - English Country NL - Netherlands Keywords GaAs ; semi-insulating ; metal-semiconductor contact ; Schottky barrier ; work function Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects IAA1010404 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) CEZ AV0Z10100521 - FZU-D (2005-2011) UT WOS 000268987900039 DOI 10.1016/j.nima.2009.03.191 Annotation Using low work function metals (In, Gd, Mg) quasi-ohmic non-alloyed contacts to SI-GaAs radiation detectors have been fabricated and their I-V characteristic have been measured. Unusual transport properties of these contacts are discussed. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2010
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