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Deposition of SiC thin films using pulsed sputtering of a hollow cathode

SYSNO ASEP	0331189
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Ostatní články
Title	Deposition of SiC thin films using pulsed sputtering of a hollow cathode
Title	Depozice SiC tenkých vrstev pomocí pulzního rozprašování duté katody
Author(s)	Soukup, R. J. (US) Ianno, N.J. (US) Huguenin-Love, J.L. (US) Lauer, N.T. (US) Hubička, Zdeněk (FZU-D)_{RID, ORCID, SAI}
Source Title	Journal of Materials Science and Engineering - ISSN 1934-8959 Roč. 3, č. 8 (2009), s. 1-4
Number of pages	4 s.
Language	eng - English
Country	US - United States
Keywords	hollow cathode ; pulsed sputtering ; 4H SiC
Subject RIV	BH - Optics, Masers, Lasers
R&D Projects	1M06002 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
CEZ	AV0Z10100522 - FZU-D (2005-2011)
Annotation	Thin films of SiC have been deposited using a hollow cathode sputtering methodes. Crystalline SiC thin films were deposited by pulsed hollow cathode plasma excitation.
Workplace	Institute of Physics
Contact	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Year of Publishing	2010

Number of the records: 1