Number of the records: 1
Performance of silicon PIN photodiodes at low temperatures and in high magnetic fields
- 1.
SYSNO ASEP 0330880 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Performance of silicon PIN photodiodes at low temperatures and in high magnetic fields Title Výkon křemíkových PIN fotodiodů při nízkých teplotách a ve vysokých magnetických polích Author(s) Wauters, F. (BE)
Kraeva, I.S. (BE)
Tandecki, M. (BE)
Traykov, E. (BE)
Van Gorp, S. (BE)
Zákoucký, Dalibor (UJF-V) RID, SAI, ORCID
Severijns, N. (BE)Source Title Nuclear Instruments & Methods in Physics Research Section A. - : Elsevier - ISSN 0168-9002
Roč. 604, č. 3 (2009), s. 563-567Number of pages 5 s. Language eng - English Country NL - Netherlands Keywords PIN-diode ; beta-particle detection ; Magnetic field Subject RIV BG - Nuclear, Atomic and Molecular Physics, Colliders CEZ AV0Z10480505 - UJF-V (2005-2011) UT WOS 000267198700018 DOI 10.1016/j.nima.2009.03.012 Annotation The performance of an Si p-i-n (PIN) diode (type Hamamatsu S3590-06) as an energy sensitive detector operating at cryogenic temperatures (similar to 10 K) and in magnetic fields up to 11 T was investigated, using a Bi-207 conversion electron source. it was found that the detector still performs well under these conditions, with small changes in the response function being observed in high magnetic fields, e.g. a 30-50% decrease in energy resolution. A Monte Carlo simulation with the GEANT4 toolkit showed that the observed effects are mainly due to the modified trajectories of the electrons due to the influence of the magnetic field, which changes the scattering conditions, rather than to intrinsic changes of the performance of the detector itself. Workplace Nuclear Physics Institute Contact Markéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228 Year of Publishing 2010
Number of the records: 1