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Deposition of Germanium Nanowires from Digermane Precursor: Influence of the Substrate Pretreatment
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SYSNO ASEP 0330695 Document Type C - Proceedings Paper (int. conf.) R&D Document Type The record was not marked in the RIV Title Deposition of Germanium Nanowires from Digermane Precursor: Influence of the Substrate Pretreatment Title Depozice germaniových nanodrátů z digermánu: Vliv úpravy substrátu Author(s) Dřínek, Vladislav (UCHP-M) RID, ORCID, SAI
Fajgar, Radek (UCHP-M) RID, ORCID, SAI
Šubrt, Jan (UACH-T) SAI, RID
Klementová, Mariana (UACH-T) RID, SAI, ORCIDSource Title Meeting Abstracts. - - : -, 2009 - ISBN N Pages abs.2621 Number of pages 1 s. Publication form CD-ROM - CD-ROM Action ECS Meeting /216./ Event date 04.10.2009-09.10.2009 VEvent location Vienna Country AT - Austria Event type EUR Language eng - English Country AT - Austria Keywords microelectronic circuits ; nanoscale technology Subject RIV CH - Nuclear ; Quantum Chemistry R&D Projects GA203/09/1088 GA ČR - Czech Science Foundation (CSF) CEZ AV0Z40720504 - UCHP-M (2005-2011) AV0Z40320502 - UACH-T (2005-2011) Annotation Germanium Nanowires (GeNWs) were synthesized by Low Pressure Chemical Vapor Deposition (LPCVD) of hexamethyldigermane (GeMe3)2 at temperature of 490 {degree sign}C and pressure of 90-100 Pa. GeNWs of several nanometers in diameter and a few microns in length were deposited onto various substrates - stainless steel, Fe, Mo, Ta, W, Si, and SiO2. Influence of surface pretreatment of the substrates (roughening of surface or Ge sputtering) is discussed in respect to the previously published theory of GeNW growth through the intermetallic alloy mechanism. The results conclude that another mechanism should be taken into account - the non-catalyst mechanism. Ge seeds necessary for triggering GeNW growth are formed by aggregation of Ge atoms/atom clusters/fragments which are stuck onto the substrate surface at the beginning of the process. The non-catalyst growth of GeNW triggered by such mechanism can be applied in growing GeNWs on semiconductors and insulators. Workplace Institute of Chemical Process Fundamentals Contact Eva Jirsová, jirsova@icpf.cas.cz, Tel.: 220 390 227 Year of Publishing 2010
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