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Deposition of Germanium Nanowires from Digermane Precursor: Influence of the Substrate Pretreatment

SYSNO ASEP	0330687
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Ostatní články
Title	Deposition of Germanium Nanowires from Digermane Precursor: Influence of the Substrate Pretreatment
Title	Depozice germaniových nanodrátů z digermánu: Vliv úpravy substrátu
Author(s)	Dřínek, Vladislav (UCHP-M)_{RID, ORCID, SAI} Fajgar, Radek (UCHP-M)_{RID, ORCID, SAI} Klementová, Mariana (UACH-T)_{RID, SAI, ORCID} Šubrt, Jan (UACH-T)_{SAI, RID}
Source Title	ECS Transactions. - : Institute of Physics Publishing - ISSN 1938-5862 Roč. 25, č. 8 (2009), s. 1015-1022
Number of pages	8 s.
Language	eng - English
Country	US - United States
Keywords	microelectronic circuits ; nanoscale technology
Subject RIV	CH - Nuclear ; Quantum Chemistry
R&D Projects	GA203/09/1088 GA ČR - Czech Science Foundation (CSF)
CEZ	AV0Z40720504 - UCHP-M (2005-2011)
	AV0Z40320502 - UACH-T (2005-2011)
Annotation	Germanium Nanowires (GeNWs) were synthesized by Low Pressure Chemical Vapor Deposition (LPCVD) of hexamethyldigermane (GeMe3)2 at temperature of 490 {degree sign}C and pressure of 90-100 Pa. GeNWs of several nanometers in diameter and a few microns in length were deposited onto various substrates - stainless steel, Fe, Mo, Ta, W, Si, and SiO2. Influence of surface pretreatment of the substrates (roughening of surface or Ge sputtering) is discussed in respect to the previously published theory of GeNW growth through the intermetallic alloy mechanism. The results conclude that another mechanism should be taken into account - the non-catalyst mechanism. Ge seeds necessary for triggering GeNW growth are formed by aggregation of Ge atoms/atom clusters/fragments which are stuck onto the substrate surface at the beginning of the process. The non-catalyst growth of GeNW triggered by such mechanism can be applied in growing GeNWs on semiconductors and insulators.
Workplace	Institute of Chemical Process Fundamentals
Contact	Eva Jirsová, jirsova@icpf.cas.cz, Tel.: 220 390 227
Year of Publishing	2010

Number of the records: 1