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High photocarrier mobility in ultrafast ion-irradiated In.sub.0.53./sub.Ga.sub.0.47./sub.As

SYSNO ASEP	0330267
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Článek ve WOS
Title	High photocarrier mobility in ultrafast ion-irradiated In_0.53Ga_0.47As
Title	Vysoká pohyblivost fotoexcitovaných nositelů náboje v In_0.53Ga_0.47As ozářeném ionty
Author(s)	Delagnes, J.C. (FR) Mounaix, P. (FR) Němec, Hynek (FZU-D)_{RID, ORCID, SAI} Fekete, Ladislav (FZU-D)_{RID, ORCID} Kadlec, Filip (FZU-D)_{RID, ORCID, SAI} Kužel, Petr (FZU-D)_{RID, ORCID, SAI} Martin, M. (FR) Mangeney, J. (FR)
Source Title	Journal of Physics D-Applied Physics. - : Institute of Physics Publishing - ISSN 0022-3727 Roč. 42, č. 19 (2009), 195103/1-195103/6
Number of pages	6 s.
Language	eng - English
Country	GB - United Kingdom
Keywords	InGaAs ; photocarrier mobility ; ultrafast photoconductivity terahertz ; ion irradiation ; terahertz ; ion irradiation
Subject RIV	BM - Solid Matter Physics ; Magnetism
R&D Projects	GP202/09/P099 GA ČR - Czech Science Foundation (CSF)
	IAA100100902 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
CEZ	AV0Z10100520 - FZU-D (2005-2011)
UT WOS	000269993100029
DOI	10.1088/0022-3727/42/19/195103
Annotation	Optical pump—terahertz probe spectroscopy was used for investigation of electron dynamics in In0.53Ga0.47As films irradiated by heavy ions (Br+) at doses from 10^9 to 10^12 cm^-2. From the transient conductivity spectra, photoexcited electron lifetimes and mobilities were determined; their decrease is observed upon increase of the irradiation dose. At the highest dose, the material combines an electron lifetime of 0.46 ps with an exceptionally high photoexcited electron mobility of 3600 cm2V–1s–1. This last value is even higher than those reported for low-temperature-grown GaAs with similar electron lifetime. Due to its rather low band gap heavy-ion irradiated IIn0.53Ga0.47As shows promising properties for the development of THz systems using telecommunication based technology.
Workplace	Institute of Physics
Contact	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Year of Publishing	2010

Number of the records: 1