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Gallium-lanthanum-sulphide amorphous thin films prepared by pulsed laser deposition

SYSNO ASEP	0329448
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Článek ve WOS
Title	Gallium-lanthanum-sulphide amorphous thin films prepared by pulsed laser deposition
Title	Amorfní tenké vrstvy Ga-La-S připravené pulzní laserovou depozicí
Author(s)	Němec, P. (CZ) Nazabal, V. (FR) Pavlišta, M. (CZ) Moreac, A. (FR) Frumar, M. (CZ) Vlček, Milan (UMCH-V)_{RID, ORCID}
Number of authors	6
Source Title	Materials Chemistry and Physics. - : Elsevier - ISSN 0254-0584 Roč. 117, č. 1 (2009), s. 23-25
Number of pages	3 s.
Language	eng - English
Country	CN - China
Keywords	chalcogenides ; thin film
Subject RIV	CA - Inorganic Chemistry
CEZ	AV0Z40500505 - UMCH-V (2005-2011)
UT WOS	000269291500006
DOI	10.1016/j.matchemphys.2009.05.037
Annotation	Thin amorphous sallium-lanthanum-sulphide films were prepared by pulsed laser deposition method. The prepared layers were characterized in terms of the structure, chemical composition and optical properties. The photo-and thermally induced phenomena were studied.
Workplace	Institute of Macromolecular Chemistry
Contact	Eva Čechová, cechova@imc.cas.cz ; Tel.: 296 809 358
Year of Publishing	2010

Number of the records: 1