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A method for electrochemical growth of homogeneous nanocrystalline ZnO thin films at room temperature
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SYSNO ASEP 0329255 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title A method for electrochemical growth of homogeneous nanocrystalline ZnO thin films at room temperature Title Elektrochemická příprava tenké nanokrystalické homogenní vrstvy ZnO za laboratorní teploty Author(s) Pauporté, T. (FR)
Jirka, Ivan (UFCH-W) RID, ORCIDSource Title Electrochimica acta. - : Elsevier - ISSN 0013-4686
Roč. 54, č. 28 (2009), s. 7558-7564Number of pages 7 s. Language eng - English Country GB - United Kingdom Keywords electrodeposition ; ZnO ; room temperature ; photoluminiscence Subject RIV CF - Physical ; Theoretical Chemistry R&D Projects IAA400400909 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) CEZ AV0Z40400503 - UFCH-W (2005-2011) UT WOS 000271151600060 DOI 10.1016/j.electacta.2009.08.022 Annotation We report the electrodeposition at room temperature (25 °C), in a potentiostatic mode, of cohesive nanocrystalline ZnO thin films from an oxygenated zinc chloride bath. It is shown that the bath saturation by molecular oxygen precursor is a key parameter to grow the oxide at low temperature. After low O2 bubbling the solution is not saturated and the surface is more or less passivated by an amorphous Zn(OH)2 veil-like thin layer. After intense and long molecular oxygen bubbling, the current density rapidly increases after an induction period of about 800 s. At the foot of the current onset, crystallized ZnO seeds appear entrapped in the initial amorphous layer. The film nucleation is a delayed process. The electrode is subsequently covered by a homogeneous ZnO film with structures of several hundreds of nanometers in length composed of nanocrystals with size of about 17 nm. Workplace J. Heyrovsky Institute of Physical Chemistry Contact Michaela Knapová, michaela.knapova@jh-inst.cas.cz, Tel.: 266 053 196 Year of Publishing 2010
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