Number of the records: 1
Deep defects in GaN/AlGaN/SiC hererostructures
- 1.
SYSNO ASEP 0328675 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Deep defects in GaN/AlGaN/SiC hererostructures Title Hluboké defekty v heterostrukturách GaN/AlGaN/SiC Author(s) Kindl, Dobroslav (FZU-D) RID
Hubík, Pavel (FZU-D) RID, ORCID
Krištofik, Jozef (FZU-D) RID
Mareš, Jiří J. (FZU-D) RID, ORCID
Výborný, Zdeněk (FZU-D)
Leys, M.R. (BE)
Boeykens, S. (BE)Number of authors 7 Source Title Journal of Applied Physics. - : AIP Publishing - ISSN 0021-8979
Roč. 105, č. 9 (2009), 093706/1-093706/8Number of pages 8 s. Language eng - English Country US - United States Keywords nitrides ; silicon carbide ; deep levels ; DLTS Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects GA202/07/0525 GA ČR - Czech Science Foundation (CSF) CEZ AV0Z10100521 - FZU-D (2005-2011) UT WOS 000266263300075 Annotation Deep level transient spectroscopy (DLTS) measurements were carried out on GaN/AlGaN/SiC heterostructures prepared by MOVPE. The deep level parameters were correlated with the SiC substrate orientation and the AlGaN layer composition. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2010
Number of the records: 1