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Ultrafast carrier dynamics in microcrystalline silicon probed by time-resolved terahertz spectroscopy

SYSNO ASEP	0324998
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Článek ve WOS
Title	Ultrafast carrier dynamics in microcrystalline silicon probed by time-resolved terahertz spectroscopy
Title	Ultrarychlá dynamika nositelů náboje v mikrokrystalickém křemíku studovaná pomocí časově rozlišené terahertzové spektroskopie
Author(s)	Fekete, Ladislav (FZU-D)_{RID, ORCID} Kužel, Petr (FZU-D)_{RID, ORCID, SAI} Němec, Hynek (FZU-D)_{RID, ORCID, SAI} Kadlec, Filip (FZU-D)_{RID, ORCID, SAI} Deyneka, Alexander (FZU-D) Stuchlík, Jiří (FZU-D)_{RID, ORCID} Fejfar, Antonín (FZU-D)_{RID, ORCID, SAI}
Source Title	Physical Review. B - ISSN 1098-0121 Roč. 79, č. 11 (2009), 115306/1-115306/13
Number of pages	13 s.
Language	eng - English
Country	US - United States
Keywords	microcrystalline silicon ; amorphous silicon ; terahertz ; ultrafast ; photoconductivity
Subject RIV	BM - Solid Matter Physics ; Magnetism
R&D Projects	LC06040 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
	IAA100100902 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
CEZ	AV0Z10100520 - FZU-D (2005-2011)
	AV0Z10100521 - FZU-D (2005-2011)
UT WOS	000264768900088
DOI	10.1103/PhysRevB.79.115306
Annotation	We present the results of optical pump - terahertz probe experiments applied to a set of thin film microcrystalline silicon samples, with structures varying from amorphous to fully microcrystalline. The samples were excited at wavelengths 800 and 400 nm and studied at temperatures down to 20 K. The character of nanoscopic electrical transport properties markedly change on a sub-picosecond time scale. The initial transient photoconductivity of the samples is dominated by hot free carriers with a mobility of 70 cm2/Vs. These carriers are rapidly (within 0.6 ps) trapped into weakly localized hopping states. The hopping process dominates the THz spectra on the picosecond and sub-ns time scales. The saturated high-frequency value of the hopping mobility is limited by the sample disorder in the amorphous sample and by electron-phonon interaction for microcrystalline samples.
Workplace	Institute of Physics
Contact	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Year of Publishing	2009

Number of the records: 1