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Crystallographic properties of grain size-controlled polycrystalline silicon thin films deposited on alumina substrate

SYSNO ASEP	0324621
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Článek ve WOS
Title	Crystallographic properties of grain size-controlled polycrystalline silicon thin films deposited on alumina substrate
Title	Krystalografické vlastnosti tenkých vrstev polykrystalického křemíku s řízenou velikostí zrna na safírových podložkách
Author(s)	Ogane, A. (JP) Honda, Shinya (FZU-D) Uraoka, Y. (JP) Fuyuki, T. (JP) Fejfar, Antonín (FZU-D)_{RID, ORCID, SAI} Kočka, Jan (FZU-D)_{RID, ORCID, SAI}
Source Title	Journal of Crystal Growth. - : Elsevier - ISSN 0022-0248 Roč. 311, č. 3 (2009), s. 789-793
Number of pages	5 s.
Language	eng - English
Country	NL - Netherlands
Keywords	crystallites ; defects ; chemical vapor deposition processes ; solar cells
Subject RIV	BM - Solid Matter Physics ; Magnetism
CEZ	AV0Z10100521 - FZU-D (2005-2011)
UT WOS	000264161700088
DOI	10.1016/j.jcrysgro.2008.09.098
Annotation	In order to obtain higher performance of polycrystalline silicon (poly-Si) thin film devices, crystallinity of poly-Si thin films should be enhanced. In this study, films with thickness of 10 [mu]m heading for the solar cell application were thermally deposited onto alumina substrates with in-situ grain size controlling by using the intermittent source gas supply method to reduce grain boundaries. By changing source gas supply condition, the grain size was controlled in the range of a few [mu]m to over 10 [mu]m. Improvement of crystallinity of could be observed with grain size enlargement. The peak position and width of Raman TO-LO peak at around 520 cm-1 of small-grained sample showed larger shift from ideal value of c-Si, but becoming closer to c-Si with grain size enlargement, indicating stress relaxation. In PL measurement, intensity of TO-BE peak which indicates the crystallinity increased with grain size enlargement and resulted in carrier mobility from 20 to 40 cm2/V s.
Workplace	Institute of Physics
Contact	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Year of Publishing	2009

Number of the records: 1