Number of the records: 1
Study of Schottky diodes made on Mn doped p-type InP
- 1.
SYSNO ASEP 0323030 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Study of Schottky diodes made on Mn doped p-type InP Title Studium Šottkyho diod na InP dopovaném Mn Author(s) Žďánský, Karel (URE-Y)
Kozak, Halina (URE-Y)
Sopko, B. (CZ)
Pekárek, Ladislav (FZU-D)Number of authors 4 Source Title Journal of Materials Science-Materials in Electronics. - : Springer - ISSN 0957-4522
Roč. 19, č. 1 (2008), S333-S337Number of pages 5 s. Language eng - English Country NL - Netherlands Keywords Schottky effect ; semiconductors ; deep levels Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects KAN400670651 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) CEZ AV0Z20670512 - URE-Y (2005-2011) AV0Z10100520 - FZU-D (2005-2011) UT WOS 000260288100068 DOI 10.1007/s10854-007-9508-x Annotation Schottky diodes were studied by temperature dependent current–voltage, capacitance–voltage (C-V) and admitance spectra measurements. Current–voltage characteristics were fitted by considering thermionic emission, serial resistance of bulk InP and nonlinear serial resistance of the back contact of the diode. Schottky barrier height calculated from current–voltage characteristics was lower than the one calculated from C-V characteristics, which was prescribed to a strong density of surface states. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2009
Number of the records: 1