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Effect of Bundling on the Tangential Displacement Mode in the Raman Spectra of Semiconducting Single Walled Carbon Nanotubes during Electrochemical Charging

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    SYSNO ASEP0322814
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JOstatní články
    TitleEffect of Bundling on the Tangential Displacement Mode in the Raman Spectra of Semiconducting Single Walled Carbon Nanotubes during Electrochemical Charging
    TitleVliv shlukování polovodivých jednostěnných nanotub na tangenciální mod v Ramanských spektrech
    Author(s) Kalbáč, Martin (UFCH-W) RID, ORCID
    Kavan, Ladislav (UFCH-W) RID, ORCID
    Dunsch, L. (DE)
    Source TitleJournal of Physical Chemistry C. - : American Chemical Society - ISSN 1932-7447
    Roč. 113, č. 4 (2009), s. 1340-1345
    Number of pages6 s.
    Languageeng - English
    CountryUS - United States
    Keywordsspectroelectrochemistry ; fullerene ; renormalization
    Subject RIVCG - Electrochemistry
    R&D ProjectsGC203/07/J067 GA ČR - Czech Science Foundation (CSF)
    LC510 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    IAA400400804 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
    KAN200100801 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
    IAA400400911 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
    CEZAV0Z40400503 - UFCH-W (2005-2011)
    DOI10.1021/jp8091623
    AnnotationA detailed in situ Raman spectroelectrochemical analysis of semiconducting single-walled carbon nanotubes (SWCNTs) in bundles is presented. Special attention has been given to the development of the frequency and intensity of the tangential displacement mode (TG) during electrochemical charging. For negative charging, the frequency of the G+ component of the TG mode increased, decreased, and remained unchanged for the 2.18, 2.54, and 2.41 eV laser photon energies, respectively. For positive charging, only an increase in the frequency of the G+ component has been observed. The maximum frequency upshift (at the applied electrochemical potential of 1.5 V vs Ag-pseudoreference) increased for decreasing photon energies in the series from 2.54 to 2.41 and 2.18 eV. The frequency of the G+ component of the TG mode changes significantly at potentials of approximately 0.8-1.0 and -1.2 V for positive and negative doping, respectively.
    WorkplaceJ. Heyrovsky Institute of Physical Chemistry
    ContactMichaela Knapová, michaela.knapova@jh-inst.cas.cz, Tel.: 266 053 196
    Year of Publishing2009
Number of the records: 1  

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