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Effect of Bundling on the Tangential Displacement Mode in the Raman Spectra of Semiconducting Single Walled Carbon Nanotubes during Electrochemical Charging
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SYSNO ASEP 0322814 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Ostatní články Title Effect of Bundling on the Tangential Displacement Mode in the Raman Spectra of Semiconducting Single Walled Carbon Nanotubes during Electrochemical Charging Title Vliv shlukování polovodivých jednostěnných nanotub na tangenciální mod v Ramanských spektrech Author(s) Kalbáč, Martin (UFCH-W) RID, ORCID
Kavan, Ladislav (UFCH-W) RID, ORCID
Dunsch, L. (DE)Source Title Journal of Physical Chemistry C. - : American Chemical Society - ISSN 1932-7447
Roč. 113, č. 4 (2009), s. 1340-1345Number of pages 6 s. Language eng - English Country US - United States Keywords spectroelectrochemistry ; fullerene ; renormalization Subject RIV CG - Electrochemistry R&D Projects GC203/07/J067 GA ČR - Czech Science Foundation (CSF) LC510 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) IAA400400804 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) KAN200100801 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) IAA400400911 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) CEZ AV0Z40400503 - UFCH-W (2005-2011) DOI 10.1021/jp8091623 Annotation A detailed in situ Raman spectroelectrochemical analysis of semiconducting single-walled carbon nanotubes (SWCNTs) in bundles is presented. Special attention has been given to the development of the frequency and intensity of the tangential displacement mode (TG) during electrochemical charging. For negative charging, the frequency of the G+ component of the TG mode increased, decreased, and remained unchanged for the 2.18, 2.54, and 2.41 eV laser photon energies, respectively. For positive charging, only an increase in the frequency of the G+ component has been observed. The maximum frequency upshift (at the applied electrochemical potential of 1.5 V vs Ag-pseudoreference) increased for decreasing photon energies in the series from 2.54 to 2.41 and 2.18 eV. The frequency of the G+ component of the TG mode changes significantly at potentials of approximately 0.8-1.0 and -1.2 V for positive and negative doping, respectively. Workplace J. Heyrovsky Institute of Physical Chemistry Contact Michaela Knapová, michaela.knapova@jh-inst.cas.cz, Tel.: 266 053 196 Year of Publishing 2009
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