Number of the records: 1  

Deposition of Ba.sub.x./sub.Sr.sub.1-x./sub.TiO.sub.3./sub. thin films by double RF hollow cathode plasma jet system

  1. 1.
    SYSNO ASEP0319065
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitleDeposition of BaxSr1-xTiO3 thin films by double RF hollow cathode plasma jet system
    TitleDepozice tenkých vrstev BaxSr1-xTiO3 pomocí systému dvou vysokofrekvenčních plazmových trysek s efektem duté katody
    Author(s) Hubička, Zdeněk (FZU-D) RID, ORCID, SAI
    Virostko, Petr (FZU-D)
    Tichý, M. (CZ)
    Čada, Martin (FZU-D) RID, ORCID, SAI
    Adámek, Petr (FZU-D) RID, ORCID
    Olejníček, Jiří (FZU-D) RID, ORCID
    Deyneka, Alexander (FZU-D)
    Churpita, Olexandr (FZU-D) RID, ORCID
    Valvoda, V. (CZ)
    Jastrabík, Lubomír (FZU-D) RID, ORCID
    Source TitleContributions to Plasma Physics. - : Wiley - ISSN 0863-1042
    Roč. 48, 5-7 (2008), s. 515-520
    Number of pages6 s.
    Languageeng - English
    CountryDE - Germany
    KeywordsBSTO ; ferroelectric films ; hollow cathode ; Langmuir probe ; optical emission spectroscopy ; plasma jet
    Subject RIVBM - Solid Matter Physics ; Magnetism
    R&D ProjectsKAN301370701 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
    KJB100100707 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
    1QS100100563 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
    GA202/06/0776 GA ČR - Czech Science Foundation (CSF)
    CEZAV0Z10100522 - FZU-D (2005-2011)
    UT WOS000258126900022
    DOI10.1002/ctpp.200810083
    AnnotationLow-pressure plasma jet system with two hollow cathodes was used for deposition of BaxSr1-xTiO3 (BSTO) ferroelectric thin films. In the experiment, the composition of BSTO films was controlled by magnitude of average RF power applied on particular plasma jet guns with STO and BTO nozzles. X-ray diffraction proved that BSTO thin films were polycrystalline with perovskite structure and measurement of dielectric properties showed ferroelectric hysteresis loop at room temperature.
    WorkplaceInstitute of Physics
    ContactKristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
    Year of Publishing2009
Number of the records: 1  

  This site uses cookies to make them easier to browse. Learn more about how we use cookies.