Number of the records: 1
Ferromagnetic semiconducting material based on rutile (TiO2) implanted with cobalt ions,
- 1.
SYSNO ASEP 0315826 R&D Document Type The record was not marked in the RIV Title Ferromagnetic semiconducting material based on rutile (TiO2) implanted with cobalt ions, Title Feromagnetické polovodivé materiály na bázi rutilu (TiO2) implantovaného kobaltovými iotny Author(s) Khaibulline, R. (RU)
Tagirov, L. (RU)
Bazarov, V. V. (RU)
Ibragimov, S. (RU)
Faizrakhmanov, I. (RU)
Akdogan, N. (DE)
Nefedov, A. (DE)
Zabel, H. (DE)
Macková, Anna (UJF-V) RID, ORCID, SAI
Hnatowicz, Vladimír (UJF-V) RIDSource Title 16th International Conference on Ion Beam Modification of Materials Book of Abstracts. - Dresden : Institute of Ion Beam Physics and Materials Research, Forschungzentrum Dresden-Rossendorf, 2008
S. 437-437Number of pages 1 s. Action 16th International Conference on Ion Beam Modification of Materials Event date 31.08.2008-05.09.2008 VEvent location Dresden Country DE - Germany Event type WRD Language eng - English Country DE - Germany Keywords ferromagnetic properties ; rutile ; Co implantation Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects KJB100480601 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) LC06041 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) CEZ AV0Z10480505 - UJF-V (2005-2011) Annotation We report on synthesis of ferromagnetic semiconducting material based on rutile (TiO2). The homogeneously-doped samples of the ferromagnetic material were obtained by implantation with 40 keV cobalt ions into single-crystalline rutile plates along the c axis (i.e. [001] crystallographic direction) to fluences in the range of (1-3).1017 ions/cm2. The rutile substrates were kept at 900 K upon the implantation process. The magnetic properties of the material are as follows: the ferromagnetic ordering temperature is about 850K, the saturation magnetic moment is 0.5-1.2 Bohr magnetons per cobalt ion, the remanence-to-saturation magnetic moment ratio as large as 0.2-0.6, and the coercive field is about 10-50 mT at room temperature. The room-temperature resistivity of the material varies in the range 1-100 Ohm.cm depending on the implantation parameters such as the ion flux and fluence. The implantation regimes, sample characterization and physical properties are discussed in details. Workplace Nuclear Physics Institute Contact Markéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228 Year of Publishing 2009
Number of the records: 1