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Magnetism in GaN: Gd, Dy thin layers
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SYSNO ASEP 0315822 R&D Document Type The record was not marked in the RIV Title Magnetism in GaN: Gd, Dy thin layers Title Magnetismus v tenkých vrstvách GaN: Gd, Dy Author(s) Sofer, Z. (CZ)
Sedmidubský, D. (CZ)
Buchal, C. (DE)
Hardtdegen, H. (DE)
Mikulics, M. (DE)
Peřina, Vratislav (UJF-V) RID
Macková, Anna (UJF-V) RID, ORCID, SAI
Maryško, Miroslav (FZU-D) RID
Hejtmánek, Jiří (FZU-D) RID, ORCID
Václavů, M. (CZ)Source Title 16th International Conference on Ion Beam Modification of Materials Book of Abstracts. - Dresden : Institute of Ion Beam Physics and Materials Research, Forschungzentrum Dresden-Rossendorf, 2008
S. 439-439Number of pages 1 s. Action 16th International Conference on Ion Beam Modification of Materials Event date 31.08.2008-05.09.2008 VEvent location Dresden Country DE - Germany Event type WRD Language eng - English Country DE - Germany Keywords magnetic semiconductors ; III–V semiconductors ; ion implantation of rare earth Subject RIV BM - Solid Matter Physics ; Magnetism CEZ AV0Z10480505 - UJF-V (2005-2011) AV0Z10100502 - FZU-D (2005-2011) Annotation We present a complex study of Gd and Dy implanted GaN layers grown by low pressure MOVPE on c-plane sapphire substrate. Gd and Dy ions were implanted with energies of 200 keV and fluences ranging from 5x1013 to 4x1017 atoms.cm-2. The chemical composition and concentration profiles of implanted ions layers were studied by SIMS and RBS. Magnetic behaviour was investigated using Quantum Design MPMS and DSM10 susceptometer. Implanted layers exhibit ferromagnetic behaviour persisting up to 720 K. Based on the fact that the samples are electrically conducting we speculate that the ferromagnetism can be associated with doped electrons mediating the ferromagnetic interaction between local moments on Gd and Dy. Workplace Nuclear Physics Institute Contact Markéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228 Year of Publishing 2009
Number of the records: 1