Growth and properties of InAs/In.sub.x./sub.Ga.sub.1-x./sub.As/GaAs quantum dot structures

Hulicius, Eduard; Oswald, Jiří; Pangrác, Jiří; Vyskočil, Jan; Hospodková, Alice; Kuldová, Karla; Melichar, Karel; Šimeček, Tomislav

doi:https://dx.doi.org/10.1016/j.jcrysgro.2007.11.055

Number of the records: 1

Growth and properties of InAs/In.sub.x./sub.Ga.sub.1-x./sub.As/GaAs quantum dot structures

1.

SYSNO ASEP	0308047
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Ostatní články
Title	Growth and properties of InAs/In_xGa_1-xAs/GaAs quantum dot structures
Title	Růst a vlastnosti InAs/In_xGa_1-xAs/GaAs struktur s kvantovými tečkami
Author(s)	Hulicius, Eduard (FZU-D)_{RID, ORCID, SAI} Oswald, Jiří (FZU-D)_{RID, ORCID} Pangrác, Jiří (FZU-D)_{RID, ORCID, SAI} Vyskočil, Jan (FZU-D)_RID Hospodková, Alice (FZU-D)_{RID, ORCID, SAI} Kuldová, Karla (FZU-D)_{RID, ORCID} Melichar, Karel (FZU-D) Šimeček, Tomislav (FZU-D)
Source Title	Journal of Crystal Growth. - : Elsevier - ISSN 0022-0248 Roč. 310, 7-9 (2008), s. 2229-2233
Number of pages	5 s.
Language	eng - English
Country	NL - Netherlands
Keywords	nanostructures ; metalorganic vapor-phase epitaxy ; semiconducting III–V materials
Subject RIV	BM - Solid Matter Physics ; Magnetism
R&D Projects	KJB101630601 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
	IAA100100719 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
	GA202/06/0718 GA ČR - Czech Science Foundation (CSF)
	GA202/05/0242 GA ČR - Czech Science Foundation (CSF)
CEZ	AV0Z10100521 - FZU-D (2005-2011)
DOI	10.1016/j.jcrysgro.2007.11.055
Annotation	Single- and double-layer InAs/GaAs quantum dot structures with strain-reducing layers (SRLs) were prepared by metalorganic vaporphase epitaxy using the Stranski–Krastanow growth mode. Structures were studied in-situ by reflectance anisotropy spectroscopy (RAS), and ex-situ by photoluminescence (PL). These structures, with very intense room temperature PL at wavelengths from 1.25 to 1.55 μm according to growth and structure parameters, were grown along while monitored with RAS. Strong correlation between RAS signal and PL intensity was found. Dependence of PL emission maximum position on SRL composition and capping layer thickness is shown.
Workplace	Institute of Physics
Contact	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Year of Publishing	2008

Number of the records: 1