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Charge-coupled device area detector for low energy electrons
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SYSNO ASEP 0205623 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Ostatní články Title Charge-coupled device area detector for low energy electrons Author(s) Horáček, Miroslav (UPT-D) RID, ORCID, SAI Source Title Review of Scientific Instruments. - : AIP Publishing - ISSN 0034-6748
Roč. 74, č. 7 (2003), s. 3379 - 3384Number of pages 6 s. Language eng - English Country US - United States Keywords low energy electrons ; charged-coupled device ; detector Subject RIV JA - Electronics ; Optoelectronics, Electrical Engineering R&D Projects GA102/00/P001 GA ČR - Czech Science Foundation (CSF) CEZ AV0Z2065902 - UPT-D Annotation A fast position-sensitive detector was designed for the angle- and energy-selective detection of signal electrons in the scanning low energy electron microscope (SLEEM), based on a thinned back-side directly electron-bombarded charged-coupled device (CCD) sensor (EBCCD). The principle of the SLEEM operation and the motivation for the development of the detector are explained. The electronics of the detector is described as well as the methods used for the measurement of the electron-bombarded gain and of the dark signal. The EBCCD gain of 565 for electron energy 5 keV and dynamic range 59 dB for short integration time up to 10 ms at room temperature were obtained. The energy dependence of EBCCD gain and the detection efficiency are presented for electron energy between 2 and 5 keV, and the integration time dependence of the output signals under dark conditions is given for integration time from 1 to 500 ms. Workplace Institute of Scientific Instruments Contact Martina Šillerová, sillerova@ISIBrno.Cz, Tel.: 541 514 178 Year of Publishing 2004
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