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SLEEM Imaging of Doping Patterns in Semiconductors
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SYSNO ASEP 0205406 Document Type C - Proceedings Paper (int. conf.) R&D Document Type Conference Paper Title SLEEM Imaging of Doping Patterns in Semiconductors Author(s) Müllerová, Ilona (UPT-D) RID, SAI, ORCID
Frank, Luděk (UPT-D) RID, SAI, ORCID
El Gomati, M. M. (GB)Source Title Proceedings of 5th Multinational Congress on Electron Microscopy. - Lecce : Rinton Press, 2001 / Dini L. ; Catalano M. - ISBN 1-58949-003-7 Pages s. 317-318 Number of pages 2 s. Action MCEM '01 /5./ - Multinational Congress on Electron Microscopy Event date 20.09.2001-25.09.2001 VEvent location Lecce Country IT - Italy Event type WRD Language eng - English Country IT - Italy Keywords UHV SEM ; low energy range Subject RIV JA - Electronics ; Optoelectronics, Electrical Engineering R&D Projects IAA1065901 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) CEZ AV0Z2065902 - UPT-D Annotation P + doped patterns in n-type Si were observed in a UHV SEM equipped with the cathode lens, i.e. in the SLEEM mode. In the low energy range below 6 keV, p-type appeared brighter than n-type. The contrast reaches its maximum at 50 to 100 eV, which value fits that of the shortest penetration depth of electrons. This supports explanation based on influence of the internal field connected with the band bending caused by presence of the surface states. Workplace Institute of Scientific Instruments Contact Martina Šillerová, sillerova@ISIBrno.Cz, Tel.: 541 514 178 Year of Publishing 2002
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