Number of the records: 1
Electron Backscattering from Real and In-Situ Treated Surfaces
- 1.
SYSNO ASEP 0205235 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Ostatní články Title Electron Backscattering from Real and In-Situ Treated Surfaces Author(s) Frank, Luděk (UPT-D) RID, SAI, ORCID
Steklý, Richard (UPT-D)
Zadražil, Martin (UPT-D)
El Gomati, M. M. (GB)
Müllerová, Ilona (UPT-D) RID, SAI, ORCIDSource Title Microchimica Acta. - : Springer - ISSN 0026-3672
Roč. 132, 2-4 (2000), s. 179-188Number of pages 10 s. Language eng - English Country AT - Austria Subject RIV JA - Electronics ; Optoelectronics, Electrical Engineering R&D Projects IAA1065901 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) GA202/99/0008 GA ČR - Czech Science Foundation (CSF) CEZ AV0Z2065902 - UPT-D Annotation Significant differences in backscattered electron yields exist between the surfaces cleaned by methods used in electron microscopy and spectroscopy. These differences have been observed for Au, Cu and Al specimens, and are interpreted on the basis simulated BSE yields. Composition and thickness of the surface contamination layers, responsible for the differences, are estimated. The results (7 nm of carbon on Au or 3 nm of oxide on AL) remain within expectation and indicate that the BSE yield measurement and BSE images should be interpreted cautiously. Peculiar results are obtained for Cu, perhaps due to a different cleaning procedure. A new concept of an information depth for the BSE signal is introduced as a depth within which the total BSE yield can be modelled as composed of the yields of layers proportional to their thickness weighted by the escape depths. This concept proved satisfactory for thin surface layers and brought the information depth values 2 to 4 times smaller than first estimated, i.e. half the penetration depth. Workplace Institute of Scientific Instruments Contact Martina Šillerová, sillerova@ISIBrno.Cz, Tel.: 541 514 178 Year of Publishing 2001
Number of the records: 1