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Low frequency noise and I-V characteristic as characterization tools for 2.3 µm CW GaSb based laser diodes
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SYSNO ASEP 0104222 Document Type C - Proceedings Paper (int. conf.) R&D Document Type Conference Paper Title Low frequency noise and I-V characteristic as characterization tools for 2.3 µm CW GaSb based laser diodes Title Nízkofrekvenční šum a V-A charakteristiky kontinuálních GaSb laserových diod pro 2.3µm Author(s) Vaněk, J. (CZ)
Brzokoupil, V. (CZ)
Chobola, Z. (CZ)
Hulicius, Eduard (FZU-D) RID, ORCID, SAI
Šimeček, Tomislav (FZU-D)Source Title Research Activities of Physics Departments of Civil Engineering Faculties in the Czech and Slovak Republics. - Brno : Brno University of Technology, 2004 / Pazdera L. ; Kořenská M. - ISBN 80-7204-353-6 Pages s. 184-186 Number of pages 3 s. Action International Workshop on Research Activities of Physics Departments of Civil Engineering Faculties in the Czech and Slovak Republics Event date 14.09.2004-16.09.2004 VEvent location Brno Country CZ - Czech Republic Event type EUR Language eng - English Country CZ - Czech Republic Keywords low frequency noise ; GaSb Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects KSK1010104 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) Annotation Transport and noise characteristic of forward biased 2.3 µm CW GaSb laser diodes were measured in order to evaluate new technology. From the measurement results it follows that noise spectral density related to defects is of 1/f type and its magnitude was found to be proportional to the square of DC forward current at low injection levels Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2005
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