Number of the records: 1
Properties of MOVPE InAs/GaAs quantum dots overgrown by InGaAs
- 1.
SYSNO ASEP 0085159 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Ostatní články Title Properties of MOVPE InAs/GaAs quantum dots overgrown by InGaAs Title Vlastnosti InAs/GaAs kvantových teček přerůstaných InGaAs připravených pomocí MOVPE Author(s) Hospodková, Alice (FZU-D) RID, ORCID, SAI
Hulicius, Eduard (FZU-D) RID, ORCID, SAI
Oswald, Jiří (FZU-D) RID, ORCID
Pangrác, Jiří (FZU-D) RID, ORCID, SAI
Mates, Tomáš (FZU-D) RID, ORCID
Kuldová, Karla (FZU-D) RID, ORCID
Melichar, Karel (FZU-D)
Šimeček, Tomislav (FZU-D)Source Title Journal of Crystal Growth. - : Elsevier - ISSN 0022-0248
Roč. 298, - (2007), s. 582-858Number of pages 4 s. Language eng - English Country NL - Netherlands Keywords nanostructures ; metalorganic vapor phase epitaxy ; arsenides ; semiconducting III-V materials Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects KJB101630601 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) GA202/06/0718 GA ČR - Czech Science Foundation (CSF) LC510 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) LC06040 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) CEZ AV0Z10100521 - FZU-D (2005-2011) Annotation We studied photoluminescence of InAs/GaAs quantum dots covered by InGaAs strain reducing layer (SRL). These structures show strong red shift of photoluminescence maxima with increased In content in SRL Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2008
Number of the records: 1