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Coulomb Blockade Anisotropic Magnetoresistance Effect in a (Ga,Mn)As Single-Electron Transistor
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SYSNO ASEP 0079015 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Ostatní články Title Coulomb Blockade Anisotropic Magnetoresistance Effect in a (Ga,Mn)As Single-Electron Transistor Title Anisotropní magnetoresistence v režimu Coulombovské blokády v jednoelektronovém transistoru na bázi (Ga,Mn)As Author(s) Wunderlich, J. (GB)
Jungwirth, Tomáš (FZU-D) RID, ORCID
Kaestner, B. (GB)
Irvine, A.C. (GB)
Shick, Alexander (FZU-D) RID, ORCID
Stone, N. (GB)
Wang, K. Y. (GB)
Rana, U. (GB)
Giddings, A.D. (GB)
Foxon, C. T. (GB)
Campion, R. P. (GB)
Williams, D.A. (GB)
Gallagher, B. L. (GB)Source Title Physical Review Letters. - : American Physical Society - ISSN 0031-9007
Roč. 97, č. 7 (2006), 077201/1-077201/4Number of pages 4 s. Language eng - English Country US - United States Keywords anisotropic magnetoresistance ; Coulomb blockade ; single electron transistor Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects GA202/05/0575 GA ČR - Czech Science Foundation (CSF) LC510 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) CEZ AV0Z10100521 - FZU-D (2005-2011) Annotation Experimental discovery and theoretical description of the Coulomb blockade anisotropic magnetoresistance in a ferromagnetic GaMnAs single electron transistor Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2007
Number of the records: 1