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Research of Technology Used for Fabrication of Active and Passive Waveguides on Semiconductor Base
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SYSNO ASEP 0030582 Document Type C - Proceedings Paper (int. conf.) R&D Document Type Conference Paper Title Research of Technology Used for Fabrication of Active and Passive Waveguides on Semiconductor Base Title Výzkum postupu pro přípravu aktivních a pasivních vlnovodů v polovodičích Author(s) Prajzler, V. (CZ)
Špirková, J. (CZ)
Oswald, J. (CZ)
Peřina, Vratislav (UJF-V) RID
Hüttel, I. (CZ)
Hamáček, J. (CZ)
Machovič, V. (CZ)
Burian, Z. (CZ)Source Title CTU reports Proceedings of Workshop 2005, 9 - A - special issue. - Prague : -, 2005 - ISBN 80-01-03201-9 Pages s. 448-449 Number of pages 2 s. Action Workshop 2005 Event date 01.03.2005-02.03.2005 VEvent location Prague Country CZ - Czech Republic Event type WRD Language eng - English Country CZ - Czech Republic Keywords doped galium nitride ; magnetron sputering ; surface analyses Subject RIV BG - Nuclear, Atomic and Molecular Physics, Colliders R&D Projects GA104/03/0385 GA ČR - Czech Science Foundation (CSF) CEZ AV0Z10480505 - UJF-V (2005-2011) Annotation The magnetron sputtering was used to fabricate RE doped GaN layers fabricated by magnetron sputtering on various substrate using a gaseous mixture of nitrogen and argon as precursors. The doping of the GaN films with RE occurred simultaneously with the sputtering process when placing the metal RE pellets or RE powder onto the Ga2O3 target. The amount of the incorporated erbium increased with increasing weight of the RE pellets or RE powder. We observed photoluminescence emission at 1 550 nm due to the 4I13/2 → 4I15/2 transition under excitation at 488 nm and 980 nm. Workplace Nuclear Physics Institute Contact Markéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228 Year of Publishing 2006
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