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Impact of rare earth elements on the properties of InP-based epitaxial layers

SYSNO ASEP	0021048
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Ostatní články
Title	Impact of rare earth elements on the properties of InP-based epitaxial layers
Title	Vliv vzácných zemin na vlastnosti vrstev na bázi InP
Author(s)	Procházková, Olga (URE-Y) Grym, Jan (URE-Y) Zavadil, Jiří (URE-Y)_RID Žďánský, Karel (URE-Y) Kopecká, M. (CZ)
Source Title	ChemZi - ISSN 1336-7242 Roč. 1, č. 1 (2005), s. 187-187
Number of pages	1 s.
Action	Zjazd chemických spoločností /57./
Event date	04.09.2005-08.09.2005
VEvent location	Tatranské Matliare
Country	SK - Slovakia
Event type	EUR
Language	eng - English
Country	SK - Slovakia
Keywords	epitaxial growth ; semiconductors ; rare earth compounds
Subject RIV	JA - Electronics ; Optoelectronics, Electrical Engineering
R&D Projects	GA102/03/0379 GA ČR - Czech Science Foundation (CSF)
CEZ	AV0Z20670512 - URE-Y (2005-2011)
Annotation	The addition of all studied rare earth elements (Ce, Pr, Nd, Sm, Tb, Dy, Ho, Er, Tm, Yb a Lu) leads to the reduction of structural defect densities by one and a half order of magnitude and undesirable electrically active impurities were reduced by up to three orders of magnitude. PL spectra confirmed the high purity and structural quality of grown InP layers. The addition of Ce and Yb leads to the introduction into the host lattice.
Workplace	Institute of Radio Engineering and Electronics
Contact	Petr Vacek, vacek@ufe.cz, Tel.: 266 773 413, 266 773 438, 266 773 488
Year of Publishing	2006

Number of the records: 1