Number of the records: 1
GaP-on-Si heterointerfaces and quasisubstrate growth studied in situ during MOVPE
- 1.Supplie, O. - Brückner, S. - May, M.M. - Kleinschmidt, P. - Nägelein, A. - Paszuk, A. - Romanyuk, Olexandr - Grosse, F. - Hannappel, T.
GaP-on-Si heterointerfaces and quasisubstrate growth studied in situ during MOVPE.
GCCCG-1/DKT2016. Dresden: TU Dresden, 2016. s. 40.
[German Czechoslovak Conference on Crystal Growth (GCCCG-1) /1./. 16.03.2016-18.03.2016, Dresden]
http://hdl.handle.net/11104/0268689
Number of the records: 1