Number of the records: 1
Depth profile of acceptor concentration in InGaN/GaN multiple quantum wells
- 1.Hájek, František - Hospodková, Alice - Hubáček, Tomáš - Oswald, Jiří - Pangrác, Jiří - Dominec, Filip - Horešovský, Robert - Kuldová, Karla
Depth profile of acceptor concentration in InGaN/GaN multiple quantum wells.
Journal of Luminescence. Roč. 236, Aug (2021), č. článku 118127. ISSN 0022-2313. E-ISSN 1872-7883
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 4.171, year: 2021
Method of publishing: Open access with time embargo
http://hdl.handle.net/11104/0320090
Number of the records: 1