Number of the records: 1
Strong suppression of In desorption from InGaN QW by improved technology of upper InGaN/GaN QW interface
- 1.Hubáček, Tomáš - Hospodková, Alice - Oswald, Jiří - Kuldová, Karla - Pangrác, Jiří - Zíková, Markéta - Hájek, František - Dominec, Filip - Florini, N. - Komninou, Ph. - Ledoux, G. - Dujardin, C.
Strong suppression of In desorption from InGaN QW by improved technology of upper InGaN/GaN QW interface.
Journal of Crystal Growth. Roč. 507, Feb (2019), s. 310-315. ISSN 0022-0248. E-ISSN 1873-5002
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.632, year: 2019
Method of publishing: Open access with time embargo
http://hdl.handle.net/11104/0294724
Number of the records: 1