Number of the records: 1
Damage accumulation and structural modification in a- and c-plane GaN implanted with 400-keV and 5-MeV Au+ ions
- 1.Macková, Anna - Malinský, Petr - Jagerová, Adéla - Sofer, Z. - Sedmidubský, D. - Klímová, K. - Bottger, R. - Akhmadaliev, S.
Damage accumulation and structural modification in a- and c-plane GaN implanted with 400-keV and 5-MeV Au+ ions.
Surface and Interface Analysis. Roč. 50, č. 11 (2018), s. 1099-1105. ISSN 0142-2421. E-ISSN 1096-9918.
[17th European Conference on Applications of Surface and Interface Analysis (ECASIA 2017). Monpellier, 24.09.2017-29.09.2017]
OECD category: Nuclear physics
Impact factor: 1.319, year: 2018
http://hdl.handle.net/11104/0289383
Number of the records: 1