Number of the records: 1
Investigation of Boron containing AlN and AlGaN layers grown by MOVPE
- 1.Rettig, O. - Scholz, J.P. - Steiger, N. - Bauer, S. - Hubáček, Tomáš - Zíková, Markéta - Li, Y. - Qi, H. - Biskupek, J. - Kaiser, U. - Thonke, K. - Scholz, F.
Investigation of Boron containing AlN and AlGaN layers grown by MOVPE.
Physica Status Solidi B. Roč. 255, č. 5 (2018), s. 1-9, č. článku 1700510. ISSN 0370-1972. E-ISSN 1521-3951
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.454, year: 2018
http://hdl.handle.net/11104/0289786
Number of the records: 1