Number of the records: 1
MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 µm
- 1.Zíková, Markéta - Hospodková, Alice - Pangrác, Jiří - Oswald, Jiří - Krčil, Pavel - Hulicius, Eduard - Komninou, Ph. - Kioseoglou, J.
MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 µm.
Journal of Crystal Growth. Roč. 414, Mar (2015), 167-171. ISSN 0022-0248. E-ISSN 1873-5002
Impact factor: 1.462, year: 2015
http://hdl.handle.net/11104/0250242
Number of the records: 1