Number of the records: 1
Gate controlled magnetoresistance in a silicon metal-oxide-semiconductor field-effect-transistor
- 1.Ciccarelli, C. - Park, B.G. - Ogawa, S. - Ferguson, A.J. - Wunderlich, Joerg
Gate controlled magnetoresistance in a silicon metal-oxide-semiconductor field-effect-transistor.
Applied Physics Letters. Roč. 97, č. 8 (2010), 082106/1-082106/3. ISSN 0003-6951. E-ISSN 1077-3118
Impact factor: 3.820, year: 2010
http://hdl.handle.net/11104/0193257
Number of the records: 1