Number of the records: 1
Growth and characterization of GaN:Mn layers by MOVPE
- 1.Sofer, Z. - Sedmidubský, D. - Stejskal, J. - Hejtmánek, J. - Marygsko, M. - Jurek, K. - Václavů, M. - Havránek, Vladimír - Macková, Anna
Growth and characterization of GaN:Mn layers by MOVPE.
Journal of Crystal Growth. Roč. 310, č. 23 (2008), s. 5025-5027. ISSN 0022-0248. E-ISSN 1873-5002.
[14th International Conference on Metal Organic Vapor Phase Epitaxy. Metz, 01.06.2008-06.06.2008]
Impact factor: 1.757, year: 2008
http://hdl.handle.net/11104/0170802
Number of the records: 1